The circuit presented here is amplifier circuit using MOSFET output stages, as a substitute for the output stage based on bipolar transistors. This project is for those who want to experiment with the power MOSFET. Without going into details, the MOSFET has a characteristic sound of vacuum tubes and bipolar transistors. The main advantages MOSFET Amplifier : simplicity of operation, hundreds of watts with a simple parallel, negative temperature coefficient and fast switching times. The main disadvantages : a high input capacity from 500 to 1000 pF, sensitivity to electrostatic discharge.
MOSFETs are available in a very wide range in the PNP and NPN, the voltage from 100 to 200 volts or more, additional models (such as bipolar). Model commonly used in power amplifiers are 10N16, 10P16, IRFP140, IRFP9140, IRFP240, IRFP9240, 2SK135, 2SJ50, 2SK1530, 2SJ201. In this project, points A and C are connected to the output of the driver stage, point B is to counter-reaction and the point D the mass driver. Board is planned for the case TO3P transistors, it will slightly bend the foot for TO220-type packages.
Set the quiescent current (of about 100 mA per MOSFET) is an adjustable potentiometer of 250 ohms is placed between points A and C, without any other complications. It is always possible to use other conventional systems. Zener diode is provided to protect the MOSFET with a very simple system, for better system you can try more complex systems (+ 1N4148 zener zener in series + series resistance,…). Traditional Rx resistor wirewound .22 ohm 5 watt resistor is replaced with a 5 to 1.2 Ohm 1 watt carbon layers are connected in parallel to avoid the effects of self. Cx capacitors should be placed in accordance with the compensation that will be made, pcb is provided for all cases.
| Reference | Capacity in pF input | Capacity in pF output |
Compensation pF input / output |
|
| IRF530 (IR) | 670 | 250 | 190 | 110 |
| IRF9530 (IR) | 860 | 340 | ||
| IRF540 (IR) | 1700 | 560 | 30 | |
| IRF9540 (IR) | 1400 | 590 | 300 | |
| IRFP140 (IR) | 1700 | 550 | 40 | |
| IRFP9140 (IR) | 1400 | 590 | 300 | |
| IRFP240 (IR) | 1300 | 400 | ||
| IRFP9240 (IR) | 1200 | 370 | 100 | 30 |
| IRFP240 (Harris) | 1275 | 500 | 125 | |
| IRFP9240 (Harris) | 1400 | 350 | 150 | |
Parts list :
R1, R2, R3, R4 = 100 to 470 Ohms 1 / 4 W metal film
R5 = 10 ohm 1 watt carbon
Rx = 1.2 Ohm 1 W carbon
C1, C2 = 100 uF 100 Volts
C3 = 220 nF 100 Volts
Cx = ceramic capacitor (value depends on the compensation to be made, see table)
D1, D2 = 10 Volt zener diode 400 mW
T1, T2 = example IRFP140 (100 V), IRFP240 (200 V)
T3, T4 = example IRFP9140 (100 V), IRFP9240 (200 V)
Note : This project has not yet been tested.
The universal voltage divider biasing circuit is a popular biasing technique used to establish a desired DC operating condition of bipolar transistor amplifiers as well as mosfet amplifiers.