Below is the 600W MOSFET power amplifier circuit design and the power supply circuit designed for this power amplifier. PCB layout design for the power amplifier and it’s power supply is provided.

600W MOSFET Power Amplifier PCB Design

Power Supply Circuit Design

Schematic Diagram:

PCB Layout:

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This is the circuit design of Mosfet power amplifier 5200W RMS, the schematic is for single channel. The circuit uses 16x IRFP250 to gain 5200W RMS power output at 2 ohms load.

To feed this circuit , you will need 150 volts dual polarity (symmetrical) power supply of course with very high DC current.

If you want to build this amplifier circuit, you should be careful and try to find some reference about this kind of circuit since it uses high DC voltage and high DC curent and of course expensive loudspeaker. I haven’t build this circuit yet, try this circuit with your own risk.

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For this haigh power fet amplifier, use two symmetrical power supply.
V max: balanced + / – 65V DC
V max: balanced + / – 60V DC
I max: 6A + / – 65V
I max: 5A + / – 60V

100W Audio Amplifier based F.E.T Parts list :

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This circuit have Power output is 200 Wrms in 8 ohms or 350 Wrms into 4 ohms. Less than 0.02% distortion, damping factor greater than 300, the ratio signal / noise 112 dB (A balanced at full power), input sensitivity is 1.2 volts (200 W / 8 ohms).

Current source of + / – 1 mA carried around T5 and T6. Diodes D1 to D6 allow the use of low-noise type BC560C and BC550C transistors, transistor T7 to T10 is the driver stage. Potentiometer P1 allows setting the quiescent current of 100 mA per output transistor.

Symmetrical power entrusted to the large transformer 625 VA, 2 * 51 volts + bridge rectifier and 4700 uF capacitor 6, which gives the output voltage of + and – 70 volts per rail.

Note :

• The capacitor C3 is not reproduced on the diagram and on the PCB (it is correct).
• Transistors T9 and T10 must be assembled on a common heatsink with 5° c/w thermal resistance or on the output stage heatsink.
• The ground (earth) points of PCB’s and loudspeaker ground (earth) must compulsorily be connected in star with the 0 Volts of the PSU.
• The power transistors must be assembled on a heatsink with a thermal resistance less than 1 ° C/W. They must also be electrically insulated from the heatsink by using a mica insulator + heat-conducting compound or a silicone insulator.

The post 200 Watt MOSFET Amplifier appeared first on Amplifier Circuit Design.

MOSFETs are available in a very wide range in the PNP and NPN, the voltage from 100 to 200 volts or more, additional models (such as bipolar). Model commonly used in power amplifiers are 10N16, 10P16, IRFP140, IRFP9140, IRFP240, IRFP9240, 2SK135, 2SJ50, 2SK1530, 2SJ201. In this project, points A and C are connected to the output of the driver stage, point B is to counter-reaction and the point D the mass driver. Board is planned for the case TO3P transistors, it will slightly bend the foot for TO220-type packages.

Set the quiescent current (of about 100 mA per MOSFET) is an adjustable potentiometer of 250 ohms is placed between points A and C, without any other complications. It is always possible to use other conventional systems. Zener diode is provided to protect the MOSFET with a very simple system, for better system you can try more complex systems (+ 1N4148 zener zener in series + series resistance,…). Traditional Rx resistor wirewound .22 ohm 5 watt resistor is replaced with a 5 to 1.2 Ohm 1 watt carbon layers are connected in parallel to avoid the effects of self. Cx capacitors should be placed in accordance with the compensation that will be made, pcb is provided for all cases.

Parts list :
R1, R2, R3, R4 = 100 to 470 Ohms 1 / 4 W metal film
R5 = 10 ohm 1 watt carbon
Rx = 1.2 Ohm 1 W carbon
C1, C2 = 100 uF 100 Volts
C3 = 220 nF 100 Volts
Cx = ceramic capacitor (value depends on the compensation to be made, see table)
D1, D2 = 10 Volt zener diode 400 mW
T1, T2 = example IRFP140 (100 V), IRFP240 (200 V)
T3, T4 = example IRFP9140 (100 V), IRFP9240 (200 V)

Note : This project has not yet been tested.

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25 Watt power amplifier based MosFet,  can be connected directly to the signal source and does not require pre-amplifier to drive. The amplitude of the input signal must reach the level of 200 mV. This signal is normally present on the linear output recorder, CD player, computer sound card and other devices. To adjust the volume can be placed at the entrance to the potentiometer 10 kohm. Trimmer adjustable quiescent current. It must be within 100 mA.

Technical data:
Output power :  well in excess of 25 Watt RMS @ 8 Ohm (1KHz sine wave)
Sensitivity : 200mV input for 25W output
Frequency response : 30Hz to 20KHz -1dB
Total harmonic distortion @ 1KHz : 0.1W 0.014% 1W 0.006% 10W 0.006% 20W 0.007% 25W 0.01%
Total harmonic distortion @10KHz : 0.1W 0.024% 1W 0.016% 10W 0.02% 20W 0.045% 25W 0.07%
Unconditionally stable on capacitive loads

Power supply for this 25 watts power amplifier based MosFet can be found here.

Parts list :
Resistor
R1,R4 : 47K  1/4W
R2 : 1/4W
R3 : 1K5  1/4W
R5 : 390R   1/4W
R6 : 470R   1/4W
R7 : 33K   1/4W
R8 : 150K   1/4W
R9 : 15K   1/4W
R10 : 27R   1/4W
R11 : 500R   1/2W Trimmer Cermet
R12,R13,R16 : 10R   1/4W
R14,R15 : 220R   1/4W
R17 : 8R2    2W
R18 : R22   4W Resistor (wirewound)
 Capacitor
C1 : 470nF  63V Polyester Capacitor
C2 : 330pF  63V Polystyrene Capacitor
C3,C5 : 470µF  63V Electrolytic Capacitors
C4,C6,C8,C11 : 100nF  63V Polyester Capacitors
C7 : 100µF  25V Electrolytic Capacitor
C9 : 10pF  63V Polystyrene Capacitor
C10 : 1µF  63V Polyester Capacitor
 Semiconductor
Q1-Q5 : BC560C   45V 100mA Low noise High gain PNP Transistors
Q6 : BD140    80V 1.5A PNP Transistor
Q7 : BD139    80V 1.5A NPN Transistor
Q8 : IRF530  100V 14A N-Channel Hexfet Transistor
Q9 : IRF9530 100V 12A P-Channel Hexfet Transistor

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